Datasheet

MBR1090CT-E3, MBR10100CT-E3
www.vishay.com
Vishay General Semiconductor
Revision: 10-May-16
1
Document Number: 89125
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Dual Common Cathode High Voltage Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.


PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5.0 A
V
RRM
90 V, 100 V
I
FSM
120 A
V
F
0.75 V
T
J
max. 150 °C
Package TO-220AB
Diode variation Dual common cathode
TO-220AB
CASE
PIN 2
PIN 1
PIN 3
1
2
3
TMBS
®
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1090CT MBR10100CT UNIT
Max. repetitive peak reverse voltage V
RRM
90 100 V
Working peak reverse voltage V
RWM
90 100 V
Max. DC blocking voltage V
DC
90 100 V
Max. average forward rectified current at T
C
= 105 °C
total device
I
F(AV)
10
A
per diode 5.0
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I
FSM
120 A
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH per diode E
AS
60 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C per diode I
RRM
0.5 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +150 °C