Datasheet

MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
www.vishay.com
Vishay General Semiconductor
Revision: 11-Sep-13
1
Document Number: 89034
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
Trench MOS Schottky technology
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
90 V, 100 V
I
FSM
150 A
V
F
0.65 V
T
J
max. 150 °C
Package
TO-220AC, ITO-220AC,
TO-263AB
Diode variations Single die
CASE
PIN 2
PIN 1
MBR1090
MBR10100
MBRB1090
MBRB10100
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
MBRF1090
MBRF10100
PIN 2
PIN 1
TO-263AB
TO-220AC ITO-220AC
TMBS
®
1
2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1090 MBR10100 UNIT
Maximum repetitive peak reverse voltage V
RRM
90 100 V
Working peak reverse voltage V
RWM
90 100 V
Maximum DC blocking voltage V
DC
90 100 V
Maximum average forward rectified current at T
C
= 133 °C I
F(AV)
10 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150 A
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH E
AS
130 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
I
RRM
0.5 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-65 to +150 °C

Summary of content (5 pages)