Datasheet

P600A, P600B, P600D, P600G, P600J, P600K, P600M
www.vishay.com
Vishay General Semiconductor
Revision: 13-Aug-13
1
Document Number: 88692
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General Purpose Plastic Rectifier
FEATURES
• Low forward voltage drop
• Low leakage current
• High forward current capability
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
MECHANICAL DATA
Case: P600, void-free molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
6.0 A
V
RRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
I
FSM
400 A
V
F
0.9 V, 1.0 V
I
R
5.0 μA
T
J
max. 150 °C
Package P600
Diode variations Single die
P600
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL P600A P600B P600D P600G P600J P600K P600M UNIT
Max. repetitive peak reverse voltage V
RRM
50 100 200 400 600 800 1000 V
Max. RMS voltage V
RMS
35 70 140 280 420 560 700 V
Max. DC blocking voltage V
DC
50 100 200 400 600 800 1000 V
Max. average
forward rectified
current at
T
A
= 60 °C, 0.375" (9.5 mm)
lead length (fig. 1)
I
F(AV)
6.0
A
T
L
= 60 °C, 0.125" (3.18 mm)
lead length (fig. 2)
22
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
400 A
Operating junction and storage temperature range T
J
, T
STG
- 50 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL P600A P600B P600D P600G P600J P600K P600M UNIT
Max. instantaneous forward
voltage
6.0 A
V
F
0.90 1.0
V
100 A 1.30 1.4
Max. DC reverse current at
rated DC blocking voltage
T
A
= 25 °C
I
R
5.0 μA
T
A
=100 °C 1.0 mA
Typical reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
2.5 μs
Typical junction capacitance 4.0 V, 1 MHz C
J
150 pF