Datasheet

Document Number: 88716 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 04-Aug-09 [e-mail]
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High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
SB1H90, SB1H100
Vishay General Semiconductor
New Product
FEATURES
• High barrier technology for improved high T
J
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Very low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
90 V, 100 V
I
FSM
50 A
V
F
0.62 V
I
R
1.0 μA
T
J
max. 175 °C
DO-204AL (DO-41)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SB1H90 SB1H100 UNIT
Maximum repetitive peak reverse voltage V
RRM
90 100 V
Maximum RMS voltage V
RMS
63 70 V
Maximum DC blocking voltage V
DC
90 100 V
Maximum average forward rectified current I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
50 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Peak repetitive reverse surge current at t
p
= 2.0 μs, 1 kHz I
RRM
1.0 A
Maximum operating junction temperature T
J
175 °C
Storage temperature range T
STG
- 55 to + 175 °C