Datasheet

ManualsBrandsVISHAY ManualsDiodesSchottky Diode

SD103AWS, SD103BWS, SD103CWS

www.vishay.com

Vishay Semiconductors

Rev. 2.2, 01-Jun-17

Document Number: 85682

For technical questions within your region: DiodesAmericas@vishay.com

, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Schottky Diodes

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MECHANICAL DATA

Case: SOD-323

Weight: approx. 4.3 mg

Packaging codes/options:

18/10K per 13” reel (8 mm tape), 10K/box

08/3K per 7” reel (8 mm tape), 15K/box

FEATURES

• The SD103 series is a metal-on-silicon

Schottky barrier device which is protected by

a PN junction guard ring

• The low forward voltage drop and fast

switching make it ideal for protection of MOS

devices, steering, biasing, and coupling

diodes for fast switching and low logic level

applications

• For general purpose applications

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

(1)

Valid provided that electrodes are kept at ambient temperature

Note

(1)

Valid provided that electrodes are kept at ambient temperature

Available

Models

PARTS TABLE

PART ORDERING CODE

CIRCUIT

CONFIGURATION

TYPE MARKING REMARKS

SD103AWS

SD103AWS-E3-08 or SD103AWS-E3-18

Single S6

Tape and reel

SD103AWS-HE3-08 or SD103AWS-HE3-18

SD103BWS

SD103BWS-E3-08 or SD103BWS-E3-18

Single S7

SD103BWS-HE3-08 or SD103BWS-HE3-18

SD103CWS

SD103CWS-E3-08 or SD103CWS-E3-18

Single S8

SD103CWS-HE3-08 or SD103CWS-HE3-18

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

Repetitive peak reverse voltage

SD103AWS V

RRM

40 V

SD103BWS V

RRM

30 V

SD103CWS V

RRM

20 V

Forward continuous current

(1)

350 mA

Power dissipation

(1)

tot

200 mW

Single cycle surge 10 μs square wave I

FS;M

THERMAL CHARACTERISTICS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Thermal resistance junction to ambient air

(1)

thJA

500 K/W

Junction temperature T

125 °C

Operating temperature range T

-55 to +125 °C

Storage temperature range T

stg

-55 to +150 °C

Summary of content (4 pages)

PAGE 1
SD103AWS, SD103BWS, SD103CWS www.vishay.
PAGE 2
SD103AWS, SD103BWS, SD103CWS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MAX. UNIT VR = 30 V SD103AWS IR 5 μA μA Leakage current Diode capacitance Reverse recovery time TYP. VR = 20 V SD103BWS IR 5 VR = 10 V SD103CWS IR 5 μA VF 370 mV 600 mV IF = 20 mA Forward voltage drop MIN. IF = 200 mA VF VR = 0 V, f = 1 MHz CD 50 pF IF = IR = 50 mA to 200 mA, recover to 0.
PAGE 3
SD103AWS, SD103BWS, SD103CWS www.vishay.com Vishay Semiconductors VR - Reverse Voltage (V) 50 40 100 mA 30 200 mA I F = 400 mA 20 10 0 18492 0 100 200 Tamb - Ambient Temperature (°C) Fig. 5 - Blocking Voltage Deration vs. Temperature at Various Average Forward Currents 0.1 [0.004] max. 0.15 [0.006] 0.10 [0.004] 0.2 [0.008] 0.8 [0.031] 1.15 [0.045] PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0° - 8° 0.40 [0.016] 0.25 [0.010] 1.95 [0.077] 2.50 [0.098] 1.1 [0.043] 0.20 [0.008] 0.
PAGE 4
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