Datasheet

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Document Number: 83664
602 Rev. 1.5, 10-Dec-08
SFH608
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Low Input Current, with Base
Connection, 5300 V
RMS
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
DC forward current I
F
50 mA
Surge forward current t
P
≤ 10 µs I
FSM
2.5 A
Total power dissipation P
diss
70 mW
OUTPUT
Collector emitter voltage V
CE
55 V
Collector base voltage V
CBO
55 V
Emitter base voltage V
EBO
7V
Collector current I
C
50 mA
Surge collector current t
P
≤ 1.0 ms 100 mA
Total power dissipation P
diss
150 mW
COUPLER
Isolation test voltage
between emitter and detector
t = 1.0 s V
ISO
5300 V
RMS
Creepage distance ≥ 7mm
Clearance distance ≥ 7mm
Comparative tracking index per
DIN IEC 112/VDE0303, part 1
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature range T
stg
- 55 to + 150 °C
Operating temperature range T
amb
- 55 to + 100 °C
Soldering temperature
(2)
max. 10 s, dip soldering: distance
to seating plane ≥ 1.5 mm
T
sld
260 °C
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 5 mA V
F
1.1 1.5 V
Reverse voltage I
R
= 10 µA V
R
6V
Reverse current V
R
= 6 V I
R
0.01 10 µA
Capacitance V
R
= 0 V, f = 1 MHz C
O
25 pF
Thermal resistance R
thja
1070 K/W
OUTPUT
Collector emitter voltage I
CE
= 10 µA V
CEO
55 V
Emitter base voltage I
EB
= 10 µA V
EBO
7V
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
10 pF
Collector base capacitance V
CE
= 5 V, f = 1 MHz C
CB
16 pF
Emitter base capacitance V
CE
= 5 V, f = 1 MHz C
EB
10 pF
Thermal resistance R
thja
500 K/W
Collector emitter leakage current V
CE
= 10 V I
CEO
10 200 nA