Datasheet

SiHG22N60EF
www.vishay.com
Vishay Siliconix
S19-0120-Rev. A, 04-Feb-2019
3
Document Number: 92246
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - C
oss
and E
oss
vs. V
DS
10
100
1000
10000
0
10
20
30
40
50
0 5 10 15 20
Axis Title
2nd line
I
D
- Drain-to-Source Current (A)
V
DS
- Drain-to-Source Voltage (V)
T
J
= 25 °C
8 V
7 V
6 V
5 V
15 V
14 V
13 V
12 V
11 V
10 V
9 V
10
100
1000
10000
0
8
16
24
32
0 5 10 15 20
Axis Title
2nd line
I
D
- Drain-to-Source Current (A)
V
DS
- Drain-to-Source Voltage (V)
15 V
14 V
13 V
12 V
11 V
10 V
9 V
T
J
= 150 °C
7 V
6 V
5 V
8 V
10
100
1000
10000
0
15
30
45
60
0 5 10 15 20
Axis Title
2nd line
I
D
- Drain-to-Source Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
V
DS
= 28.4 V
10
100
1000
10000
0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Axis Title
1st line
R
DS(on)
- Drain-to-Source On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
I
D
= 11 A
V
GS
= 10 V
10
100
1000
10000
0.1
1
10
100
1000
10 000
100 000
0 100 200 300 400 500 600
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
2
4
6
8
10
12
14
10
100
1000
10 000
0 100 200 300 400 500 600
Axis Title
E
oss
- Output Capacitance Stored Energy (µJ)
2nd line
2nd line
C
oss
- Output Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
oss
E
oss