Datasheet

ManualsBrandsVishay ManualsDiscrete SemiconductorsMOSFET Dual Common Drain N-Channel 25V PowerPAK 1212-8SCD

SiSF02DN

www.vishay.com

Vishay Siliconix

S19-0104-Rev. A, 04-Feb-2019

Document Number: 76933

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Common Drain Dual N-Channel 25 V (S1-S2) MOSFET

FEATURES

• TrenchFET

Gen IV power MOSFET

• Very low source-to-source on resistance

• Integrated common-drain n-channel MOSFETs

in a compact and thermally enhanced package

• 100 % R

and UIS tested

• Optimizes circuit layout for bi-directional current flow

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Battery protection switch

• Bi-directional switch

•Load switch

Notes

a. T

= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK 1212-8SCD is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 63 °C/W

g. Single MOSFET

h. Package limited

PRODUCT SUMMARY

S1S2

(V) 25

S1S2(on)

max. () at V

= 10 V 0.0035

S1S2(on)

max. () at V

= 4.5 V 0.0056

typ. (nC) 16.9

S1S2

(A) 60

a, h

Configuration Common drain

PowerPAK

1212-8SCD

Top View Bottom View

3.3 mm

N-Channel 1 MOSFET

N-Channel 2 MOSFET

ORDERING INFORMATION

Package PowerPAK 1212-8SCD

Lead (Pb)-free and halogen-free SiSF02DN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

S1S2

Gate-source voltage V

+16 / -12

Continuous drain current (T

= 150 °C)

= 25 °C

S1S2

= 70 °C 60

= 25 °C 30.5

b, c

= 70 °C 24

b, c

Pulsed drain current (t = 100 μs) I

S1S2M

140

Maximum power dissipation

= 25 °C

69.4

= 70 °C 44.4

= 25 °C 5.2

b, c

= 70 °C 3.3

b, c

Operating junction and storage temperature range T

, T

stg

-55 to +150

°C

Soldering recommendations (peak temperature)

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum junction-to-ambient

t  10 s R

thJA

19 24

°C/W

Maximum junction-to-case (drain) Steady state R

thJC

1.4 1.8

Summary of content (8 pages)

PAGE 1
SiSF02DN www.vishay.com Vishay Siliconix Common Drain Dual N-Channel 25 V (S1-S2) MOSFET FEATURES PowerPAK® 1212-8SCD S2 S2 6 5 • TrenchFET® Gen IV power MOSFET • Very low source-to-source on resistance • Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package • 100 % Rg and UIS tested S1 S1 8 7 S1 S2 • Optimizes circuit layout for bi-directional current flow 3. 3 1 2 G 3 D 1 4 D 1 2 G2 m m m 1 3 3.
PAGE 2
SiSF02DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a VDS VGS = 0 V, ID = 250 μA 25 - - VGS(th) VS1S2 = VGS, ID = 250 μA 1 - 2.
PAGE 3
SiSF02DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 100 VGS = 10 V thru 4 V 40 100 VGS = 3 V 20 1000 60 1st line 2nd line 1000 60 2nd line ID - Source Current (A) 80 1st line 2nd line 40 TC = 25 °C 100 20 TC = 125 °C 0 10 0 0.5 1 1.5 2 2.
PAGE 4
SiSF02DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 1000 TJ = 25 °C 1 100 0.1 0.4 0.6 0.8 1.0 ID = 250 μA 1.4 100 1.2 10 1.0 10 0.2 1000 1.6 1st line 2nd line 10 2nd line VGS(th) - Treshold Voltage (V) 1.8 TJ = 150 °C 0 10000 2.0 1st line 2nd line 2nd line IFS1S2 - Source Current (A) 100 -50 1.
PAGE 5
SiSF02DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1000 10000 Limited by RS1S2(on) a IS1S2M limited 100 2nd line IS1S2 - Source Current (A) IS1S2(ON) limited 1st line 2nd line 100 μs 1000 10 1 ms 10 ms 1 100 ms 0.1 100 1s 10 s TA = 25 °C, single pulse DC BVS1S2 limited 0.01 0.01 0.
PAGE 6
SiSF02DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 63 °C/W 0.02 3. TJM - TA = PDMZthJA (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.001 0.01 0.
PAGE 7
Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8S CD with Flip Chip C D A H A Pin 1 dot B 7 2 6 3 5 4 e 2x b 1 (8) 0.1 M C A B 0.05 M C 8 K1 E1 E E c Nxb E1 A1 0.1 C 0.05 C 0.1 C 2x H 0.1 C H D1 K L D Backside view DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.027 0.029 0.031 A1 0 0.02 0.05 0 0.001 0.002 b 0.27 0.32 0.37 0.011 0.013 0.015 c - 0.20 ref. - - 0.008 ref. - D 3.20 3.30 3.
PAGE 8
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