Datasheet

SiZF920DT
www.vishay.com
Vishay Siliconix
S18-1125 Rev. A, 12-Nov-2018
1
Document Number: 79595
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
• TrenchFET
®
Gen IV power MOSFET
•SkyFET
®
low-side MOSFET with integrated
Schottky
• 100 % R
g
and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
• Computer / server peripherals
•POL
• Synchronous buck converter
• Telecom DC/DC
Notes
a. T
C
= 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 65 °C/W for channel-1 and 65 °C/W for channel-2
PRODUCT SUMMARY
CHANNEL-1 CHANNEL-2
V
DS
(V) 30 30
R
DS(on)
max. () at V
GS
= 10 V 0.00307 0.00105
R
DS(on)
max. () at V
GS
= 4.5 V 0.00530 0.00145
Q
g
typ. (nC) 9 38.6
I
D
(A)
a
76 197
Configuration Dual
V
IN
/D
1
GND/S
2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
G
HS
/G
1
V
SW
/S
1
-D
2
G
1
Return/S
1
G
LS
/G
2
Schottky
Diode
ORDERING INFORMATION
Package PowerPAIR 6 x 5F
Lead (Pb)-free and halogen-free SiZF920DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 UNIT
Drain-source voltage V
DS
30 30
V
Gate-source voltage V
GS
+20, -16 +16, -12
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
76 197
A
T
C
= 70 °C 61 158
T
A
= 25 °C 28
b, c
49
b, c
T
A
= 70 °C 23
b, c
39
b, c
Pulsed drain current (t = 100 μs) I
DM
130 130
Continuous source-drain diode current
T
C
= 25 °C
I
S
26 122
T
A
= 25 °C 3.6
b, c
7.4
b, c
Single pulse avalanche current
L = 0.1 mH
I
AS
16 28
Single pulse avalanche energy E
AS
13 39 mJ
Maximum power dissipation
T
C
= 25 °C
P
D
28 74
W
T
C
= 70 °C 18 47
T
A
= 25 °C 3.9
b, c
4.5
b, c
T
A
= 70 °C 2.5
b, c
2.9
b, c
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL
CHANNEL-1 CHANNEL-2
UNIT
TYP. MAX. TYP. MAX.
Maximum junction-to-ambient
b, f
t  10 s R
thJA
25 32 22 28
°C/W
Maximum junction-to-case (source) Steady state R
thJC
3.5 4.4 1.3 1.7