Datasheet

New Product
SM8S10 thru SM8S43A
www.vishay.com
Vishay General Semiconductor
Revision: 14-Sep-11
1
Document Number: 88387
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Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
•T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
Note
(1)
Non-repetitive current pulse derated above T
A
= 25 °C
PRIMARY CHARACTERISTICS
V
WM
10 V to 43 V
P
PPM
(10 x 1000 μs) 6600 W
P
PPM
(10 x 10 000 μs) 5200 W
P
D
8 W
I
FSM
700 A
T
J
max. 175 °C
DO-218AB
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation
with 10/1000 μs waveform
P
PPM
6600
W
with 10/10 000 μs waveform 5200
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1) P
D
8.0 W
Peak pulse current with 10/1000 μs waveform I
PPM
(1)
See next table A
Peak forward surge current 8.3 ms single half sine-wave I
FSM
700 A
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 175 °C