Datasheet

SS32, SS33, SS34, SS35, SS36
www.vishay.com
Vishay General Semiconductor
Revision: 28-Apr-14
1
Document Number: 88751
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
20 V, 30 V, 40 V, 50 V, 60 V
I
FSM
100 A
EAS 20 mJ
V
F
0.5 V, 0.75 V
T
J
max. 125 °C, 150 °C
Package DO-214AB
Diode variations Single
DO-214AB (SMC)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOLSS32SS33SS34SS35SS36UNIT
Device marking code S2 S3 S4 S5 S6
Maximum repetitive peak reverse voltage V
RRM
20 30 40 50 60 V
Maximum RMS voltage V
RMS
14 21 28 35 42 V
Maximum DC blocking voltage V
DC
20 30 40 50 60 V
Maximum average forward rectified current at T
L
(fig. 1) I
F(AV)
3.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
100 A
Non-repetitive avalanche energy at T
A
= 25 °C,
I
AS
= 2.0 A, L = 10 mH
E
AS
20 mJ
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
-55 to +125 -55 to +150 °C
Storage temperature range T
STG
-55 to +150 °C