Datasheet

TCLD1000
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 21-Mar-14
4
Document Number: 83516
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Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 4 - Switching Times
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 5 - Forward Voltage vs. Ambient Temperature
Fig. 6 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Current Transfer Ratio vs. Ambient Temperature
Fig. 8 - Collector Dark Current vs. Ambient Temperature
R
L
50 Ω
Channel II
Channel I
I
C
= 10 mA
+ V
CC
I
F
I
F
0
R
G
= 50 Ω
t
p
t
p
= 50 s
T
= 0.01
Oscilloscope
R
I
= 1 MΩ
C
I
= 20 pF
14779
t
p
t
t
0
0
10 %
90 %
100 %
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
t
p
Pulse duration
t
d
Delay time
t
r
Rise time
t
on
(= t
d
+ t
r
) Turn-on time
t
s
Storage time
t
f
Fall time
t
off
(= t
s
+ t
f
) Turn-off time
96 11698
0.8
0.9
1.0
1.1
1.2
1.3
0 20406080100
T
amb
- Ambient Temperature (°C) 14389
V - Forward Voltage (V)
F
I
F
= 10 mA
0.1
1
10
100
1000
0.0 0.4 0.8 1.2 1.6 2.0
V
F
- Forward Voltage (V) 14390
F
I - Forward Current (mA)
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (°C) 14391
CTR - Relative Current Transfer Ratio
rel
V
CE
= 5 V
I
F
= 1 mA
1
10
100
1000
10 000
100 000
20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (°C) 14392
I - Collector Dark Current,
CEO
with Open Base (nA)
V
CE
= 10 V
I
F
= 0