Datasheet

VS-ST230C Series
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Vishay Semiconductors
Revision: 16-Dec-13
2
Document Number: 94398
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
410 (165) A
55 (85) °C
Maximum RMS on-state current I
T(RMS)
DC at 25 °C heatsink temperature double side cooled 780
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
5700
t = 8.3 ms 5970
t = 10 ms
100 % V
RRM 
reapplied
4800
t = 8.3 ms 5000
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
163
kA
2
s
t = 8.3 ms 148
t = 10 ms
100 % V
RRM 
reapplied
115
t = 8.3 ms 105
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 1630 kA
2
s
Low level value of threshold voltage V
T(TO)1
(16.7 % x  x I
T(AV)
< I <  x I
T(AV)
), T
J
= T
J
maximum 0.92
V
High level value of threshold voltage V
T(TO)2
(I >  x I
T(AV)
), T
J
= T
J
maximum 0.98
Low level value of on-state slope resistance r
t1
(16.7 % x  x I
T(AV)
< I <  x I
T(AV)
), T
J
= T
J
maximum 0.88
m
High level value of on-state slope resistance r
t2
(I >  x I
T(AV)
), T
J
= T
J
maximum 0.81
Maximum on-state voltage V
TM
I
pk
= 880 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse 1.69 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 12 V resistive load
600
mA
Maximum (typical) latching current I
L
1000 (300)
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
dI/dt
Gate drive 20 V, 20 , t
r
 1 μs
T
J
= T
J
maximum, anode voltage  80 % V
DRM
1000 A/μs
Typical delay time t
d
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
1.0
μs
Typical turn-off time t
q
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/μs, 
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , t
p
= 500 μs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage
dV/dt T
J
= T
J
maximum linear to 80 % rated V
DRM
500 V/μs
Maximum peak reverse and 
off-state leakage current
I
RRM
,
I
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied 30 mA