Datasheet

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TLHF4900

www.vishay.com

Vishay Semiconductors

Rev. 2.4, 18-Apr-17

Document Number: 83025

For technical questions, contact: LED@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Intensity LED in Ø 3 mm Clear Package

DESCRIPTION

These device series has been designed to meet the

increasing demand for AlInGaP technology.

It is housed in a 3 mm clear plastic package. The small

viewing angle of these devices provides a high brightness.

All packing units are categorized in luminous intensity and

color groups. That allows users to assemble LEDs with

uniform appearance.

PRODUCT GROUP AND PACKAGE DATA

• Product group: LED

•Package: 3 mm

• Product series: standard

• Angle of half intensity: ± 16°

FEATURES

• AlInGaP technology

• Standard Ø 3 mm (T-1) package

• Small mechanical tolerances

• Suitable for DC and high peak current

• Very small viewing angle

• Very high intensity

• Luminous intensity and color categorized

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Status lights

•Off / on indicator

• Background illumination

• Readout lights

• Maintenance lights

•Legend light

19222

PARTS TABLE

PART COLOR

LUMINOUS

INTENSITY

(mcd)

at I

(mA)

WAVELENGTH

(nm)

at I

(mA)

FORWARD

VOLTAGE

(V)

at I

(mA)

TECHNOLOGY

MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

TLHF4900 Soft orange 63 300 - 10 598 605 611 10 - 1.9 2.6 20 AllnGaP on GaAs

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C unless otherwise specified)

TLHF4900

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

DC forward current T

amb

≤ 60 °C I

30 mA

Surge forward current t

≤ 10 μs I

FSM

0.1 A

Power dissipation T

amb

≤ 60 °C P

80 mW

Junction temperature T

100 °C

Operating temperature range T

amb

-40 to +100 °C

Storage temperature range T

stg

-55 to +100 °C

Soldering temperature t ≤ 5 s, 2 mm from body T

260 °C

Thermal resistance junction-to-ambient R

thJA

400 K/W

Summary of content (5 pages)

PAGE 1
TLHF4900 www.vishay.com Vishay Semiconductors High Intensity LED in Ø 3 mm Clear Package FEATURES • AlInGaP technology • Standard Ø 3 mm (T-1) package • Small mechanical tolerances • Suitable for DC and high peak current • Very small viewing angle 19222 • Very high intensity DESCRIPTION • Luminous intensity and color categorized These device series has been designed to meet the increasing demand for AlInGaP technology. • Material categorization: for definitions of compliance please see www.vishay.
PAGE 2
TLHF4900 www.vishay.com Vishay Semiconductors OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TLHF4900, SOFT ORANGE PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Luminous intensity (1) IF = 10 mA IV 63 300 - mcd Dominant wavelength IF = 10 mA λd 598 605 611 nm Peak wavelength IF = 10 mA λp - 610 - nm deg Angle of half intensity IF = 10 mA ϕ - ± 16 - Forward voltage IF = 20 mA VF - 1.9 2.
PAGE 3
TLHF4900 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I V rel - Relative Luminous Intensity I F - Forward Current (mA) 60 50 40 30 20 10 0 20 40 60 80 1.2 1.0 0.8 0.6 0.4 0.2 Fig. 1 - Forward Current vs. Ambient Temperature for InGaN 10° 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 30 40 50 60 70 80 90 100 Fig. 4 - Relative Luminous Intensity vs.
PAGE 4
TLHF4900 www.vishay.com Vishay Semiconductors 1.2 soft orange I rel - Relative Intensity 1.0 0.8 0.6 0.4 0.2 0.0 560 580 600 620 640 660 λ - Wavelength (nm) 95 10885 Fig. 7 - Relative Intensity vs. Wavelength PACKAGE DIMENSIONS in millimeters C R1.4 (sphere) AREA NOT PLANE 6.1 ± 0.3 34.7 ± 0.5 < 0.6 (2.8) 3.4 ± 0.15 4.4 ± 0.3 3.2 ± 0.15 A Ø 2.9 ± 0.1 1.5 ± 0.5 + 0.15 + 0.2 0.5 - 0.1 0.4 - 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5255.
PAGE 5
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