Datasheet

TLHF4900
www.vishay.com
Vishay Semiconductors
Rev. 2.4, 18-Apr-17
3
Document Number: 83025
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Ambient Temperature for InGaN
Fig. 2 - Relative Luminous Intensity vs. Angular Displacement
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Luminous Intensity vs. Ambient Temperature
Fig. 5 - Relative Luminous Intensity vs. Forward Current/Duty Cycle
Fig. 6 - Relative Luminous Intensity vs. Forward Current
0
10
20
30
40
60
95 10894
50
I - Forward Current (mA)
F
T
amb
- Ambient Temperature (°C)
100806040200
0.4 0.2 0 0.2 0.4
0.6
95 10044
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
I
V rel
- Relative Luminous Intensity
1
10
100
1.0 1.5 2.0 2.5 3.0
V
F
- Forward Voltage (V) 95 10882
F
I - Forward Current (mA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 102030405060708090100
T
amb
- Ambient Temperature (°C)95 10883
I - Relative Luminous Intensity
V rel
0.0
0.4
0.8
1.2
1.6
2.0
110
96 11589
I
spec
- Specific Luminous Intensity
t
p
/T
I
F
(mA)505202
0.5 0.2 0.1 0.05 0.021
0.01
0.1
1
10
1 10 100
I
F
- Forward Current (mA)
9611588
I
V rel
- Relative Luminous Intensity