Datasheet

TLHR440., TLHO440., TLHY440., TLHG440.
www.vishay.com
Vishay Semiconductors
Rev. 3.1, 24-Mar-15
3
Document Number: 83006
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(2)
In one packing unit I
Vmin.
/I
Vmax.
≤ 0.5
Note
(1)
In one packing unit I
Vmin.
/I
Vmax.
≤ 0.5
Note
(1)
In one packing unit I
Vmin.
/I
Vmax.
≤ 0.5
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
TLHO440., SOFT ORANGE
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 10 mA TLHO4400 I
V
1.6 13 - mcd
Dominant wavelength I
F
= 10 mA λ
d
598 - 611 nm
Peak wavelength I
F
= 10 mA λ
p
- 605 - nm
Angle of half intensity I
F
= 10 mA ϕ -± 30- deg
Forward voltage I
F
= 20 mA V
F
-2.43 V
Reverse voltage I
R
= 10 μA V
R
615- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-15-pF
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
TLHY440., YELLOW
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 10 mA
TLHY4400 I
V
1.6 10 - mcd
TLHY4401 I
V
2.5 10.5 - mcd
TLHY4405 I
V
6.3 11 - mcd
TLHY4438 I
V
6.3 - 20 mcd
Dominant wavelength I
F
= 10 mA
TLHY4400 λ
d
581 - 594 nm
TLHY4401 λ
d
581 - 594 nm
TLHY4405 λ
d
581 - 594 nm
TLHY4438 λ
d
583 - 590 nm
Peak wavelength I
F
= 10 mA λ
p
- 585 - nm
Angle of half intensity I
F
= 10 mA ϕ -± 30- deg
Forward voltage I
F
= 20 mA V
F
-2.43 V
Reverse voltage I
R
= 10 μA V
R
615- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-50-pF
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
TLHG440., GREEN
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 10 mA
TLHG4400 I
V
2.5 13 - mcd
TLHG4401 I
V
414-mcd
TLHG4405 I
V
6.3 15 - mcd
Dominant wavelength I
F
= 10 mA λ
d
562 - 575 nm
Peak wavelength I
F
= 10 mA λ
p
- 565 - nm
Angle of half intensity I
F
= 10 mA ϕ -± 30- deg
Forward voltage I
F
= 20 mA V
F
-2.43 V
Reverse voltage I
R
= 10 μA V
R
615- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-50-pF