Datasheet

www.vishay.com
4
Document Number 83172
Rev. 1.3, 30-Aug-04
VISHAY
TLMO / S / Y1000
Vishay Semiconductors
Typical Characteristics (T
amb
= 25 °C unless otherwise specified)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Power Dissipation vs. Ambient Temperature
Figure 3. Relative Luminous Intensity vs. Forward Current
0
5
10
15
20
25
30
35
40
45
50
55
60
0 20406080100120
T
amb
– Ambient Temperature ( qC )
19146
P –Power Dissipation (mW)
V
0
5
10
15
20
25
0 20406080100120
T
amb
– Ambient Temperature ( qC )
19147
P –Power Dissipation (mW)
V
0.01
0.1
1
10
0.1 1 10
I
F
- Forward Current ( mA )
19127
I - Relative Luminous Intensity
Vrel
Orange
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Dominant Wavelength vs. Forward Current
Figure 6. Change of Dominant Wavelength vs. Ambient
Temperature
0.1
1
10
1 1.5 2 2.5 3
V
F
- Forward Voltage(V)
19130
I - Forward Current ( mA )
F
Orange
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
0.1 1 10
19133
- Dominant Wavelength ( nm )λ
d
Orange
I
F
- Forward Current ( mA )
–6
–4
–2
0
2
4
6
8
–200 20406080100
T
amb
– Ambient Temperature ( qC )
19136
– Change of Dom. Wavelength (nm)n l
d
Orange