Datasheet

Document Number: 88941 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-Oct-09 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.39 V at I
F
= 5 A
V30100S, VF30100S, VB30100S, VI30100S
Vishay General Semiconductor
New Product
FEATURES
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s, per JESD
22-B106 (for TO-220AB, ITO-220AB, and TO-262AA
package)
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
30 A
V
RRM
100 V
I
FSM
250 A
V
F
at I
F
= 30 A 0.69 V
T
J
max. 150 °C
V30100S VF30100S
VI30100S
VB30100S
TO-220AB
TO-263AB
TO-262AA
TMBS
®
ITO-220AB
2
1
3
PIN 1
PIN 2
PIN 3
K
1
K
2
3
NC
A
K
HEATSINK
NC
A
K
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V30100S VF30100S VB30100S VI30100S UNIT
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current (fig. 1) I
F(AV)
30 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
250 A
Non-repetitive avalanche energy at T
J
= 25 °C, L = 90 mH E
AS
230 mJ
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
I
RRM
1.0 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
- 40 to + 150 °C

Summary of content (5 pages)