Datasheet

V50100PW
www.vishay.com
Vishay General Semiconductor
Revision: 20-Dec-13
1
Document Number: 89181
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.39 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-3PW
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum


PRIMARY CHARACTERISTICS
I
F(AV)
2 x 25 A
V
RRM
100 V
I
FSM
300 A
E
AS
at L = 100 mH 280 mJ
V
F
at I
F
= 25 A 0.66 V
T
J
max. 150 °C
Package TO-3PW
Diode variations Dual common cathode
TO-3PW
TMBS
®
PIN 2
CASE
PIN 1
PIN 3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V50100PW UNIT
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current (fig. 1)
per device
I
F(AV)
50
A
per diode 25
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
300 A
Non-repetitive avalanche energy at T
J
= 25 °C, L = 100 mH per diode E
AS
280 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
I
RRM
1.0 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C