Datasheet

VEMD2500X01, VEMD2520X01
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 18-Oct-11
2
Document Number: 83294
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
1V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
32 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
110nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
4pF
V
R
= 5 V, f = 1 MHz, E = 0 C
D
1.3 pF
Open circuit voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
o
350 mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
- 2.6 mV/K
Short circuit current E
e
= 1 mW/cm
2
, λ = 950 nm I
k
11 μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Ik
0.1 %/K
Reverse light current
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
R
= 5 V
I
ra
8.5 12 17 μA
Angle of half sensitivity ϕ ± 15 deg
Wavelength of peak sensitivity λ
p
900 nm
Range of spectral bandwidth λ
0.1
350 to 1120 nm
Rise time
V
R
= 10 V, R
L
= 1 kΩ,
λ = 820 nm
t
r
100 ns
Fall time
V
R
= 10 V, R
L
= 1 kΩ,
λ = 820 nm
t
f
100 ns
20
1
10
100
1000
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
94 8427
V
R
= 10 V
100
806040
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020