Datasheet

VEMD5510C
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 22-Jun-17
2
Document Number: 84354
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Reverse Light Current vs. Irradiance
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
-0.91.3V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
20 - - V
Reverse dark current V
R
= 10 V, E = 0 I
ro
- 0.2 10 nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
-80-pF
V
R
= 3 V, f = 1 MHz, E = 0 C
D
-3040pF
Open circuit voltage E
V
= 100 lx, CIE illuminant A V
o
- 240 - mV
Temperature coefficient of V
o
E
V
= 100 lx, CIE illuminant A TK
Vo
--2.5-mV/K
Short circuit current E
V
= 100 lx, CIE illuminant A I
k
-0.6-μA
Reverse light current
E
e
= 0.2 mW/cm
2
, λ = 525 nm, V
R
= 5 V I
ra
2.0 2.6 - μA
E
V
= 100 lx, CIE illuminant A, V
R
= 5 V I
ra
0.46 0.55 - μA
Angle of half sensitivity ϕ -± 65-deg
Wavelength of peak sensitivity λ
p
- 550 - nm
Range of spectral bandwidth λ
0.5
- 440 to 700 - nm
Rise time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
r
-70-ns
Fall time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
f
-70-ns
0.1
1
10
100
1000
020406080100
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
V
R
= 10 V
0.01
0.1
1
10
10 100 1000
I
ra
- Reverse Light Current (μA)
E
V
- Illuminance (lx)
V
R
= 5 V, CIE illuminant A