Datasheet

V40100C, VI40100C
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
1
Document Number: 89162
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Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.38 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 20 A
V
RRM
100 V
I
FSM
250 A
V
F
at I
F
= 20 A 0.61 V
T
J
max. 150 °C
Package TO-220AB, TO-262AA
Diode variation Common cathode
PIN 1
PIN 2
PIN 3
K
VI40100C
TO-220AB
V40100C
1
2
3
PIN 1
PIN 2
CASE
PIN 3
TMBS
®
1
K
2
3
TO-262AA
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V40100C VI40100C UNIT
Max. repetitive peak reverse voltage V
RRM
100 V
Max. average forward rectified current (fig. 1)
per device
I
F(AV)
40
A
per diode 20
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
250 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
- 40 to + 150 °C