Datasheet

VS-10BQ015-M3
www.vishay.com
Vishay Semiconductors
Revision: 29-May-12
1
Document Number: 93349
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 1.0 A
FEATURES
Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
125 °C T
J
operation (V
R
< 5 V)
Optimized for OR-ing applications
High frequency operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10BQ015-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
Package SMB
I
F(AV)
1.0 A
V
R
15 V
V
F
at I
F
0.21 V
I
RM
35 mA at 100 °C
T
J
max. 125 °C
Diode variation Single die
E
AS
1.0 mJ
Cathode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 1.0 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 140 A
V
F
1.0 Apk, T
J
= 125 °C 0.21 V
T
J
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10BQ015-M3 UNITS
Maximum DC reverse voltage V
R
15
V
Maximum working peak reverse voltage V
RWM
25
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
L
= 134 °C, rectangular waveform 1.0 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
140
A
10 ms sine or 6 ms rect. pulse 40
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 2 mH 1.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A

Summary of content (6 pages)