Datasheet

VS-15MQ040NPbF
www.vishay.com
Vishay Semiconductors
Revision: 16-Feb-15
1
Document Number: 94141
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High Performance Schottky Rectifier, 1.5 A
FEATURES
• Surface mountable
• Extremely low forward voltage
• Compact size
• Improved reverse blocking voltage capability relative to
other similar size Schottky
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Switching power supplies
• Meter protection
• Reverse protection for power input to PC board circuits
• Battery isolation and charging
• Low threshold voltage diode
• Freewheeling or by-pass diode
• Low voltage clamp
DESCRIPTION
The VS-15MQ040NPbF Schottky rectifier is designed to be
used for low power applications where a reverse voltage of
40 V is encountered and surface mountable is required.
PRODUCT SUMMARY
Package DO-214AC (SMA)
I
F(AV)
1.5 A
V
R
40 V
V
F
at I
F
0.43 V
I
RM
20 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
6.0 mJ
Cathode Anode
DO-214AC (SMA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 1.5 A
V
RRM
40 V
I
FSM
t
p
= 5 μs sine 330 A
V
F
2 A
pk
, T
J
= 125 °C 0.43 V
T
J
Range -40 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-15MQ040NPbF UNITS
Maximum DC reverse voltage V
R
40 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
I
F(AV)
50 % duty cycle at T
L
= 105 °C, rectangular waveform
On PC board 9 mm
2
island (0.013 mm thick copper pad area)
2.1
A
I
F(AV)
50 % duty cycle at T
L
= 114 °C, rectangular waveform
On PC board 9 mm
2
island (0.013 mm thick copper pad area)
1.5
Maximum peak one cycle
non-repetitive surge current
See fig. 6
I
FSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
V
RRM
applied
330
A
10 ms sine or 6 ms rect. pulse 140
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 12 mH 6.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A