Datasheet

VS-20ETF..PbF Series, VS-20ETF..-M3 Series
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Vishay Semiconductors
Revision: 26-Jul-13
1
Document Number: 94098
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Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• 150 °C max operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified according to
JEDEC-JESD47
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop. 
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
20 A
V
R
800 V, 1000 V, 1200 V
V
F
at I
F
1.31 V
I
FSM
320 A
t
rr
95 ns
T
J
max. 150 °C
Diode variation Single die
Snap factor 0.6
Anode
1
2
3
Cathode
Base
cathode
TO-220AC
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
RRM
800 to 1200 V
I
F(AV)
Sinusoidal waveform 20
A
I
FSM
320
t
rr
1 A, 100 A/μs 95 ns
V
F
20 A, T
J
= 25 °C 1.31 V
T
J
Range - 40 to 150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-20ETF08PbF, VS-20ETF08-M3 800 900
6VS-20ETF10PbF, VS-20ETF10-M3 1000 1100
VS-20ETF12PbF, VS-20ETF12-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 113 °C, 180° conduction half sine wave 20
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 270
10 ms sine pulse, no voltage reapplied 320
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 365
A
2
s
10 ms sine pulse, no voltage reapplied 515
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 5150 A
2
s