Datasheet

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Document Number: 93711
2 Revision: 19-Sep-08
50RIA Series
Vishay High Power Products
Medium Power Thyristors
(Stud Version), 50 A
ELECTRICAL SPECIFICATIONS
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
(2)
For voltage pulses with t
p
≤ 5 ms
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
(1)
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
(2)
V
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
50RIA
10 100 150
15
20 200 300
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° sinusoidal conduction
50 A
94 °C
Maximum RMS on-state current I
T(RMS)
80 A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
1430
A
t = 8.3 ms 1490
t = 10 ms
100 % V
RRM
reapplied
1200
t = 8.3 ms 1255
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
10.18
kA
2
s
t = 8.3 ms 9.30
t = 10 ms
100 % V
RRM
reapplied
7.20
t = 8.3 ms 6.56
Maximum I
2
√t for fusing I
2
√t
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
101.8 kA
2
√s
Low level value of threshold voltage V
T(TO)1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.94
V
High level value of threshold voltage V
T(TO)2
(π x I
T(AV)
< I < 20 x π x I
T(AV)
), T
J
= T
J
maximum 1.08
Low level value of on-state
slope resistance
r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 4.08
mΩ
High level value of on-state
slope resistance
r
t2
(π x I
T(AV)
< I < 20 x π x I
T(AV)
), T
J
= T
J
maximum 3.34
Maximum on-state voltage V
TM
I
pk
= 157 A, T
J
= 25 °C 1.60 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 22 V, resistive load,
initial I
T
= 2 A
200
mA
Latching current I
L
Anode supply 6 V, resistive load 400