Datasheet

Document Number: 93711 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 19-Sep-08 3
50RIA Series
Medium Power Thyristors
(Stud Version), 50 A
Vishay High Power Products
Note
(1)
Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of
rise of turned-on current
V
DRM
≤ 600 V
dI/dt
T
C
= 125 °C, V
DM
= Rated V
DRM
,
Gate pulse = 20 V, 15 Ω, t
p
= 6 µs, t
r
= 0.1 µs maximum
I
TM
= (2 x rated dI/dt) A
200
A/µs
V
DRM
≤ 1600 V 100
Typical delay time t
d
T
C
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 10 A dc resistive circuit
Gate pulse = 10 V, 15 Ω source, t
p
= 20 µs
0.9
µs
Typical turn-off time t
q
T
C
= 125 °C, I
TM
= 50 A, reapplied dV/dt = 20 V/µs
dIr/dt = - 10 A/µs, V
R
= 50 V
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
T
J
= T
J
maximum linear to 100 % rated V
DRM
200
V/µs
T
J
= T
J
maximum linear to 67 % rated V
DRM
500
(1)
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
T
J
= T
J
maximum, t
p
≤ 5 ms 10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak positive gate current I
GM
2.5 A
Maximum peak positive gate voltage +V
GM
20
V
Maximum peak negative gate voltage -V
GM
10
DC gate current required to trigger I
GT
T
J
= - 40 °C
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
250
mAT
J
= 25 °C 100
T
J
= 125 °C 50
DC gate voltage required to trigger V
GT
T
J
= - 40 °C 3.5
V
T
J
= 25 °C 2.5
DC gate current not to trigger I
GD
T
J
= T
J
maximum,
V
DRM
= Rated voltage
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
DRM
anode to cathode
applied
5.0 mA
DC gate voltage not to trigger V
GD
T
J
= T
J
maximum 0.2 V