Datasheet

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Document Number: 93711
6 Revision: 19-Sep-08
50RIA Series
Vishay High Power Products
Medium Power Thyristors
(Stud Version), 50 A
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJ-hs
Steady State Value
R = 0.35 K/W
thJ-hs
Transient Thermal Impedance Z (K/W)
50RIA Series
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=-40 °C
(1)
(2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
tr<=1 µs
Rectangular gate pulse
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
<=30% rated di/dt : 20V, 65 ohms
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
(3) (4)
Tj=125 °C
50RIA Series Frequency Limited by PG(AV)
1 - Current code
2 - Essential part number
3 - Voltage code x 10 = V
RRM
(see Voltage Ratings table)
4
5
-
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2
A
M = Stud base TO-208AC (TO-65) M6 x 1
- Critical dV/dt:
None = 500 V/µs (standard value)
S90 = 1000 V/µs (special selection)
Device code
51324
50 RIA 120 S90 M
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95334