Datasheet

VS-50WQ06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Nov-16
1
Document Number: 93313
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High Performance Schottky Rectifier, 5.5 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Popular D-PAK outline
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-50WQ06FN-M3 surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
5.5 A
V
R
60 V
V
F
at I
F
See Electrical table
I
RM
35 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
7 mJ
Anode
1
3
Base
cathode
Anode
4, 2
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 5.5 A
V
RRM
60 V
I
FSM
t
p
= 5 μs sine 320 A
V
F
5 A
pk
, T
J
= 125 °C 0.54 V
T
J
Range -40 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-50WQ06FN-M3 UNITS
Maximum DC reverse voltage V
R
60 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 132 °C, rectangular waveform 5.5
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
320
10 ms sine or 6 ms rect. pulse 105
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.2 A, L = 10 mH 7 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.8 A