Datasheet

VS-8TQ...PbF Series, VS-8TQ...-N3 Series
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Vishay Semiconductors
Revision: 29-Aug-11
1
Document Number: 94265
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Schottky Rectifier, 8 A
FEATURES
175 °C T
J
operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-8TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
8 A
V
R
60 V, 80 V, 100 V
V
F
at I
F
0.58 V
I
RM
max. 7 mA at 125 °C
T
J
max. 175 °C
Diode variation Single die
E
AS
7.5 mJ
Anode
1
3
Cathode
Base
cathode
2
TO-220AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 8A
V
RRM
Range 60 to 100 V
I
FSM
t
p
= 5 μs sine 850 A
V
F
8 A
pk
, T
J
= 125 °C 0.58 V
T
J
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-
8TQ060PbF
VS-
8TQ060-N3
VS-
8TQ080PbF
VS-
8TQ080-N3
VS-
8TQ100PbF
VS-
8TQ100-N3
UNITS
Maximum DC
reverse voltage
V
R
60 60 80 80 100 100 V
Maximum working
peak reverse
voltage
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 157 °C, rectangular waveform 8A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
850
A
10 ms sine or 6 ms rect. pulse 230
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH 7.50 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.50 A

Summary of content (7 pages)