Datasheet

VS-EPU6006-N3, VS-APU6006-N3
www.vishay.com
Vishay Semiconductors
Revision: 17-Jul-13
1
Document Number: 94794
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Soft Recovery Diode, 60 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Designed and qualified according to
JEDEC-JESD47
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION/APPLICATIONS
VS-EPU60/VS-APU60... series are the state of the art
ultrafast recovery rectifiers designed with optimized
performance of forward voltage drop and ultrafast recovery
time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
TO-247AC modified (2 pins),
TO-247AC
I
F(AV)
60 A
V
R
600 V
V
F
at I
F
1.5 V
t
rr
typ. 32 ns
T
J
max. 175 °C
Diode variation Single die
1
2
3
TO-247AC modified
TO-247AC
1
2
3
Cathode
to base
2
1
3
Cathode
Anode
VS-EPU6006-N3
Cathode
to base
2
Anode Anode
VS-APU6006-N3
1
3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
RRM
600 V
Average rectified forward current in DC I
F(AV)
T
C
= 116 °C 60
A
Single pulse forward current I
FSM
T
C
= 25 °C 600
Operating junction and storage temperatures T
J
, T
Stg
- 55 to 175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 60 A - 1.2 1.5
I
F
= 60 A, T
J
= 125 °C - 1.1 1.3
I
F
= 60 A, T
J
= 175 °C - 1.05 1.2
Reverse leakage current I
R
V
R
= V
R
rated - - 30
μA
T
J
= 150 °C, V
R
= V
R
rated - - 200
Junction capacitance C
T
V
R
= 600 V - 38 - pF