Datasheet

Document Number: 93523 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 18-Apr-11 [e-mail]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Hyperfast Rectifier, 30 A FRED Pt
®
VS-ETH3006-M3, VS-ETH3006FP-M3
Vishay Semiconductors
FEATURES
• Hyperfast soft recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (V
INS
= 2500 V
RMS
)
• True 2 pin package
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified according to JEDEC-JESD47
DESCRIPTION/APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package 2L TO-220AC, 2L TO-220FP
I
F(AV)
30 A
V
R
600 V
V
F
at I
F
2.65 V
t
rr
(typ.) 27 ns
T
J
max. 175 °C
Diode variation Single die
2L TO-220AC 2L TO-220 FULL-PAK
Base
cathode
2
3
Anode
1
Cathode
2
Anode
1
Cathode
VS-ETH3006-M3 VS-ETH3006FP-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current in DC I
F(AV)
T
C
= 131 °C
30
AFULL-PAK T
C
= 51 °C
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 180
Operating junction and storage temperatures T
J
, T
Stg
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 30 A - 2.0 2.65
I
F
= 30 A, T
J
= 150 °C - 1.4 1.8
Reverse leakage current I
R
V
R
= V
R
rated - 0.02 30
μA
T
J
= 150 °C, V
R
= V
R
rated - 50 300
Junction capacitance C
T
V
R
= 600 V - 20 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH