Owner's manual

Preliminary
VS-GT50TP60N
www.vishay.com
Vishay Semiconductors
Revision: 22-Dec-11
2
Document Number: 94666
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 600 - -
VCollector to emitter saturation voltage V
CE(sat)
V
GE
= 15 V, I
C
= 50 A, T
J
= 25 °C - 1.65 2.10
V
GE
= 15 V, I
C
= 50 A, T
J
= 175 °C - 2.05 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 1.4 mA, T
J
= 25 °C 4.0 4.9 6.5
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 1.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 300 V, I
C
= 50 A, R
g
= 3.3 ,
V
GE
= ± 15 V, T
J
= 25 °C
-58-
ns
Rise time t
r
-31-
Turn-off delay time t
d(off)
-80-
Fall time t
f
- 100 -
Turn-on switching loss E
on
-0.41-
mJ
Turn-off switching loss E
off
-0.42-
Turn-on delay time t
d(on)
V
CC
= 300 V, I
C
= 50 A, R
g
= 3.3 ,
V
GE
= ± 15 V, T
J
= 125 °C
-64-
ns
Rise time t
r
-37-
Turn-off delay time t
d(off)
-90-
Fall time t
f
- 117 -
Turn-on switching loss E
on
-0.69-
mJ
Turn-off switching loss E
off
-0.69-
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 30 V, f = 1.0 MHz
-3.03-
nFOutput capacitance C
oes
-0.25-
Reverse transfer capacitance C
res
-0.09-
SC data I
SC
t
p
 5 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 360 V, V
CEM
 600 V
- 450 - A
Stray inductance L
CE
- - 30 nH
Module lead resistance, terminal to chip R
CC’+EE’
-0.75- m
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Forward voltage V
F
I
F
= 50 A
T
J
= 25 °C - 1.35 1.75
V
T
J
= 125 °C - 1.37 -
Reverse recovery charge Q
rr
I
F
= 50 A, V
R
= 300 V,
R
G
= 3.3 
V
GE
= - 15 V
T
J
= 25 °C - 2.3 -
μC
T
J
= 125 °C - 4.3 -
Peak reverse recovery current I
rr
T
J
= 25 °C - 33 -
A
T
J
= 125 °C - 58 -
Reverse recovery energy E
rec
T
J
= 25 °C - 0.56 -
mJ
T
J
= 125 °C - 1.11 -