Owner's manual

Preliminary
VS-GT50TP60N
www.vishay.com
Vishay Semiconductors
Revision: 22-Dec-11
4
Document Number: 94666
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
V
CE
(V)
I
C
(A)
0
20
40
60
80
100
120
0 100 200 300 400 500 600 700
Module
V
GE
= ± 15 V
T
J
= 125 °C
R
G
= 3.3 Ω
Z
thJC
(K/W)
t (s)
0.01
0.1
1
0.001 0.01 0.1 1 10
IGBT
i:
1 2 3 4
r
i
[K/W]: 0.0432 0.2376 0.2304 0.2088
[s]: 0.01 0.02 0.05 0.1
i
τ
V
F
(V)
I
F
(A)
0
10
20
30
40
50
60
70
80
90
100
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
25 °C
125 °C
I
F
(A)
E (mJ)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 102030405060708090100
V
GE
= - 15 V
T
J
= 125 °C
R
G
= 3.3 Ω
V
CC
= 300 V
E
rec