Datasheet

VSMF3710
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 02-Nov-15
2
Document Number: 81241
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
160 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +95 °C
Storage temperature range T
stg
-40 to +110 °C
Soldering temperature Acc. figure 8, J-STD-020 T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB R
thJA
250 K/W
0
20
40
60
80
100
120
140
160
180
0 20406080100
P
V
-Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
R
thJA
= 250 K/W
0
20
40
60
80
100
0 20406080100
I
F
- Forward Current (mA)
T
amb
- Ambient Temperature (°C)
R
thJA
= 250 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
-1.41.6V
I
F
= 1 A, t
p
= 100 μs V
F
-2.3-V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
--1.8-mV/K
Reverse current V
R
= 5 V I
R
- - 10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
-125-pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
61022mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
-100-mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
-40-mW
Temperature coefficient of φ
e
I
F
= 100 mA TKφ
e
- -0.35 - %/K
Angle of half intensity ϕ 60-deg
Peak wavelength I
F
= 100 mA λ
p
-890-nm
Spectral bandwidth I
F
= 100 mA Δλ -40-nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
-0.25-nm/K
Rise time I
F
= 100 mA t
r
-30-ns
Fall time I
F
= 100 mA t
f
-30-ns
Cut-off frequency I
DC
= 70 mA, I
AC
= 30 mA pp f
c
-12-MHz
Virtual source diameter d - 0.44 - mm