Data Sheet

MCP73831
DS21984A-page 4 © 2005 Microchip Technology Inc.
Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)
Precondition Current
Ratio
I
PREG
/ I
REG
7.5 10 12.5 % PROG = 2.0 kΩ to 10 kΩ
15 20 25 % PROG = 2.0 kΩ to 10 kΩ
30 40 50 % PROG = 2.0 kΩ to 10 kΩ
— 100 — % No Preconditioning
T
A
= -5°C to +55°C
Precondition Voltage
Threshold Ratio
V
PTH
/ V
REG
64 66.5 69 % V
BAT
Low-to-High
69 71.5 74 % V
BAT
Low-to-High
Precondition Hysteresis V
PHYS
—110—mVV
BAT
High-to-Low
Charge Termination
Charge Termination
Current Ratio
I
TERM
/ I
REG
3.75 5 6.25 % PROG = 2.0 kΩ to 10 kΩ
5.6 7.5 9.4 % PROG = 2.0 kΩ to 10 kΩ
7.5 10 12.5 % PROG = 2.0 kΩ to 10 kΩ
15 20 25 % PROG = 2.0 kΩ to 10 kΩ
T
A
= -5°C to +55°C
Automatic Recharge
Recharge Voltage Thresh-
old Ratio
V
RTH
/ V
REG
91.5 94.0 96.5 % V
BAT
High-to-Low
94 96.5 99 % V
BAT
High-to-Low
Pass Transistor ON-Resistance
ON-Resistance R
DSON
—350—mΩ V
DD
= 3.75V, T
J
= 105°C
Battery Discharge Current
Output Reverse Leakage
Current
I
DISCHARGE
—0.15 2μA PROG Floating
—0.25 2μAV
DD
< (V
BAT
- 50 mV)
—0.15 2μAV
DD
< V
STOP
— -5.5 -15 μA Charge Complete
Status Indicator – STAT
Sink Current I
SINK
——25mA
Low Output Voltage V
OL
—0.4 1VI
SINK
= 4 mA
Source Current I
SOURCE
——35mA
High Output Voltage V
OH
—V
DD
-0.4 V
DD
- 1 V I
SOURCE
= 4 mA
Input Leakage Current I
LK
—0.03 1μA High-Impedance
PROG Input
Charge Impedance
Range
R
PROG
2—20kΩ
Minimum Shutdown
Impedance
R
PROG
70 — 200 kΩ
Thermal Shutdown
Die Temperature T
SD
—150—°C
Die Temperature
Hysteresis
T
SDHYS
—10—°C
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for V
DD
= [V
REG
(typ.) + 0.3V] to 6V, T
A
= -40°C to +85°C.
Typical values are at +25°C, V
DD
= [V
REG
(typ.) + 1.0V]
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: Not production tested. Ensured by design.