Datasheet

MB85RC256V
16 DS501-00017-3v0-E
■ POWER ON/OFF SEQUENCE
If the device does not operate within the specified conditions of read cycle, write cycle or power on/off
sequence, memory data can not be guaranteed.
■ FRAM CHARACTERISTICS
*1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates
with destructive readout mechanism.
*2 : Minimun values define retention time of the first reading/writing data right after shipment, and these values
are calculated by qualification results.
■ NOTE ON USE
• Data written before performing IR reflow is not guaranteed after IR reflow.
• During the access period from the start condition to the stop condition, keep the level of WP, A0, A1, and
A2 pins to the “H” level or the “L” level.
Parameter Symbol
Value
Unit
Min Max
SDA, SCL level hold time during power down tpd 85 ⎯ ns
SDA, SCL level hold time during power up tpu 85 ⎯ ns
Power supply rising time tr 0.5 50 ms
Power supply falling time tf 0.5 50 ms
Item Min Max Unit Parameter
Read/Write Endurance*
1
10
12
⎯ Times/byte Operation Ambient Temperature TA = + 85 °C
Data Retention*
2
10 ⎯
Years
Operation Ambient Temperature TA = + 85 °C
95 ⎯ Operation Ambient Temperature T
A = + 55 °C
≥ 200 ⎯ Operation Ambient Temperature T
A = + 35 °C
0 V
SDA, SCL > V
DD × 0.8
*
SDA, SCL > VDD × 0.8
*
tpd
tputr
tf
V
IL (Max)
1.0 V
V
IH (Min)
2.7 V
V
DD
SDA, SCL : Don't care
SDA, SCL SDA, SCL
0 V
V
IL (Max)
1.0 V
V
IH (Min)
2.7 V
V
DD
* : SDA, SCL (Max) < VDD + 0.5 V