Datasheet

FUJITSU SEMICONDUCTOR
DATA SHEET
Copyright©2012-2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2013.9
Memory FRAM
64 K (8 K × 8) Bit SPI
MB85RS64V
DESCRIPTION
MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words ×
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
MB85RS64V adopts the Serial Peripheral Interface (SPI).
The MB85RS64V is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS64V can be used for 10
12
read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E
2
PROM.
MB85RS64V does not take long time to write data like Flash memories or E
2
PROM, and MB85RS64V takes
no wait time.
FEATURES
Bit configuration : 8,192 words × 8 bits
Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
Operating frequency : 20 MHz (Max)
High endurance : 10
12
times / byte
Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
Operating power supply voltage : 3.0 V to 5.5 V
Low power consumption : Operating power supply current 1.5 mA (Typ@20 MHz)
Standby current 10 μA (Typ)
Operation ambient temperature range : 40 °C to + 85 °C
Package : 8-pin plastic SOP (FPT-8P-M02) RoHS compliant
DS501-00015-4v0-E

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