Datasheet

MB85RS64V
DS501-00015-4v0-E 17
■ POWER ON/OFF SEQUENCE
If the device does not operate within the specified conditions of read cycle, write cycle or power on/off
sequence, memory data can not be guaranteed.
■ FRAM CHARACTERISTICS
*1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates
with destructive readout mechanism.
*2 : Minimun values define retention time of the first reading/writing data right after shipment, and these values
are calculated by qualification results.
Parameter Symbol
Value
Unit Condition
Min Max
CS
level hold time at power OFF tpd 400 ⎯ ns ⎯
CS
level hold time at power ON tpu
0.1 ⎯
ms
V
DD = 5.0V ± 0.5V Operation
0.6 ⎯ V
DD = 3.3V ± 0.3V Operation
Power supply falling time tf 200 ⎯μs/V ⎯
Power supply rising time tr
100 ⎯
μs/V
V
DD = 5.0V ± 0.5V Operation
1 ⎯ V
DD = 3.3V ± 0.3V Operation
Item Min Max Unit Parameter
Read/Write Endurance*
1
10
12
⎯ Times/byte Operation Ambient Temperature TA = + 85 °C
Data Retention*
2
10 ⎯
Years
Operation Ambient Temperature TA = + 85 °C
95 ⎯ Operation Ambient Temperature T
A = + 55 °C
≥ 200 ⎯ Operation Ambient Temperature T
A = + 35 °C
GND
CS >V
DD × 0.8
*
tpd
tputrtf
V
IL (Max)
1.2 V
V
IH (Min)
3.0 V
V
DD
CS : don't care
CS >V
DD × 0.8
*
CS CS
GND
V
IL (Max)
1.2 V
V
IH (Min)
3.0 V
V
DD
* : CS (Max) < VDD + 0.3 V