Datasheet

MB85RS64V
DS501-00015-4v0-E 17
POWER ON/OFF SEQUENCE
If the device does not operate within the specified conditions of read cycle, write cycle or power on/off
sequence, memory data can not be guaranteed.
FRAM CHARACTERISTICS
*1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates
with destructive readout mechanism.
*2 : Minimun values define retention time of the first reading/writing data right after shipment, and these values
are calculated by qualification results.
Parameter Symbol
Value
Unit Condition
Min Max
CS level hold time at power OFF tpd 400 ns
CS level hold time at power ON tpu
0.1
ms
VDD 5.0V 0.5V Operation
0.6 VDD 3.3V 0.3V Operation
Power supply falling time tf 200 s/V
Power supply rising time tr
100
s/V
VDD 5.0V 0.5V Operation
1 VDD 3.3V 0.3V Operation
Item Min Max Unit Parameter
Read/Write Endurance*
1
10
12
Times/byte Operation Ambient Temperature TA 85 C
Data Retention*
2
10
Years
Operation Ambient Temperature TA 85 C
95 Operation Ambient Temperature TA 55 C
200 Operation Ambient Temperature TA 35 C
GND
CS >VDD × 0.8
*
tpd
tputrtf
V
IL (Max)
1.2 V
V
IH (Min)
3.0 V
V
DD
CS : don't care
CS >VDD × 0.8
*
CS
CS
GND
VIL
(Max)
1.2 V
VIH (Min)
3.0 V
VDD
* : CS (Max) < VDD 0.3 V