Datasheet

MB85RS64V
18 DS501-00015-4v0-E
NOTE ON USE
We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed.
ESD AND LATCH-UP
• Current method of Latch-Up Resistance Test
Note : The voltage VIN is increased gradually and the current IIN of 300 mA at maximum shall flow.
Confirm the latch up does not occur under IIN 300 mA.
In case the specific requirement is specified for I/O and IIN cannot be 300 mA, the voltage shall be
increased to the level that meets the specific requirement.
Test DUT Value
ESD HBM (Human Body Model)
JESD22-A114 compliant
MB85RS64VPNF-G-JNE1
|2000 V|
ESD MM (Machine Model)
JESD22-A115 compliant
|200 V|
ESD CDM (Charged Device Model)
JESD22-C101 compliant
|1000 V|
Latch-Up (I-test)
JESD78 compliant
Latch-Up (Vsupply overvoltage test)
JESD78 compliant
Latch-Up (Current Method)
Proprietary method
Latch-Up (C-V Method)
Proprietary method
|200 V|
A
VDD
VSS
DUT
V
I
IN
V
IN
+
-
Test terminal
Protection Resistor
VDD
(Max.Rating)
Reference
terminal