Specifications

iii
RF impedance measurement
4.7 Calibration and compensation in RF region ................................................. 4-16
4.7.1 Calibration ................................................................................................ 4-16
4.7.2 Error source model ................................................................................. 4-17
4.7.3 Compensation method ............................................................................ 4-18
4.7.4 Precautions for open and short measurements in RF region ........... 4-18
4.7.5 Consideration for short compensation ................................................ 4-19
4.7.6 Calibrating load device ........................................................................... 4-20
4.7.7 Electrical length compensation ............................................................. 4-21
4.7.8 Practical compensation technique ........................................................ 4-22
4.8 Measurement correlation and repeatability .................................................. 4-22
4.8.1 Variance in residual parameter value .................................................. 4-22
4.8.2 A difference in contact condition ......................................................... 4-23
4.8.3 A difference in open/short compensation conditions ....................... 4-24
4.8.4 Electromagnetic coupling with a conductor near the DUT ............... 4-24
4.8.5 Variance in environmental temperature............................................... 4-25
5.0 Impedance Measurement Applications and Enhancements
5.1 Capacitor measurement ................................................................................... 5-1
5.1.1 Parasitics of a capacitor .......................................................................... 5-2
5.1.2 Measurement techniques for high/low capacitance............................ 5-4
5.1.3 Causes of negative D problem ................................................................ 5-6
5.2 Inductor measurement ..................................................................................... 5-8
5.2.1 Parasitics of an inductor ......................................................................... 5-8
5.2.2 Causes of measurement discrepancies for inductors ......................... 5-10
5.3 Transformer measurement .............................................................................. 5-14
5.3.1 Primary inductance (L1) and secondary inductance (L2) ................. 5-14
5.3.2 Inter-winding capacitance (C)................................................................ 5-15
5.3.3 Mutual inductance (M) ............................................................................ 5-15
5.3.4 Turns ratio (N).......................................................................................... 5-16
5.4 Diode measurement .......................................................................................... 5-18
5.5 MOS FET measurement .................................................................................... 5-19
5.6 Silicon wafer C-V measurement ...................................................................... 5-20
5.7 High-frequency impedance measurement using the probe ......................... 5-23
5.8 Resonator measurement ................................................................................... 5-24
5.9 Cable measurements ......................................................................................... 5-27
5.9.1 Balanced cable measurement ................................................................. 5-28
5.10 Balanced device measurement ........................................................................ 5-29
5.11 Battery measurement ....................................................................................... 5-31
5.12 Test signal voltage enhancement .................................................................... 5-32
5.13 DC bias voltage enhancement .......................................................................... 5-34
5.13.1 External DC voltage bias protection in 4TP configuration............... 5-35
5.14 DC bias current enhancement ......................................................................... 5-36
5.14.1 External current bias circuit in 4TP configuration ........................... 5-37
5.15 Equivalent circuit analysis function and its application ............................ 5-38