Product specifications

Introduction
For next generation ULSI development,
precise characteristics evaluation of
semiconductors during device devel-
opment, process development, and
circuit design phase is essential. As
well as IV measurement, C-V measure-
ments are very important to determine
the oxide thickness. Other important
parameters such as substrate impurity
concentration can also be calculated
from C-V measurement results.
Also, improvement of test productivity
is mandatory for faster IC development.
This application note explains how
to perform accurate and efficient
C-V characteristics measurements
of multiple devices by changing con-
nections using the Agilent E5250A
Matrix Switch.
Difficulties in Device
Characterization
On Test Element Groups (TEG), there
are various devices. They are for dc
characteristics measurements and
for C-V measurements. So, to improve
test efficiency, it is necessary to auto-
mate the changing of measurement
instrument connections and multi-
probing on the wafer. A switching
matrix is required to automate
switching measurement instruments
and test devices.
Until now, there has been no suitable
switching matrix for precise low cur-
rent measurements and accurate
capacitance measurements. Using
existing switching matrices, the per-
formance of measurement instruments
was sacrificed. C-V measurement
results included big error due to the
residual impedance in the extension
cables and matrices. It was also diffi-
cult to compensate for the measure-
ment error.
For precise testing, you had to per-
form IV and/or C-V measurements on
separate probing stations. There was
no adequate matrix available to com-
bine these into one probe station.
Therefore, the biggest issue was that
measurement productivity was lowered
because you had to manually switch
measurement instruments and devices.
Accurate and Efficient C-V Measurements
Application Note E5250A-3
Agilent E5250A Low Leakage Switch Mainframe
Figure 1. Agilent 4156C, 4284A, and E5250A with wafer prober

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