Specifications
EVALPFC-3kW-IPZ65R019C7
5
Application Note AN 2014-06
V1.1 January 2015
1 Introduction
1.1 Evaluation Board
This document describes the evaluation board EVALPFC-3kW-IPZ65R019C7, which is designed for the
customers to evaluate the performance of the TO247-4pin CoolMOSTM C7 family. The board is developed
for the laboratories use only and does not serve for any commercial purpose! Before operating the
evaluation board, please read the general safety instruction section first!
The aim of this document is to help the customers to get familiar with the evaluation board EVALPFC-3kW-
IPZ65R019C7 to investigate the different behavior of conventional 3pin devices compared to the high
performance TO247-4pin CoolMOS
TM
devices within a PFC application. Therefore the document focuses on
the different options offered by the special layout and variation options.
Following table gives the main technical specifications of the evaluation board:
Input voltage
85VAC~265VAC
Input current
16A eff
Input frequency
47~63Hz
Output voltage and current
400VDC, 8A
Output power
~ 3kW (at Vin=230VAC)
Average efficiency
>95% at 115VAC
Switching Frequency
Possible Range: 40kHz~250kHz;
Board frequency is set to 100kHz;
Changeable by R20
Power switch
4pin and 3pin MOSFET
1.2 CoolMOS™ C7
CoolMOS™ C7 (IPZ65R019C7) achieves extremely low conduction and switching losses per package. The
extremely low switching losses enable the designer the option for higher switching frequencies in order to
shrink the magnetic components and increase the power density.
E
oss
reduction brings efficiency benefits at light load and the low Q
g
correlates to faster switching and lower
E
on
and E
off
which gives efficiency benefits across the whole load range.
As well as balancing the various parameters to give the best-in-class performance, measures were taken to
even improve implementation/ease of use behavior compared to the CoolMOS™ CP series.
Moreover, with its granular portfolio, C7 can address the specific needs of hard switching applications for
server, PC power, telecom rectifiers and solar. C7 offers the best in class performance on the market today
with lowest R
DS(on)
per package together with 650V to give extra safety margin for designers.
1.3 thinQ!™ SiC Diode Generation 5
thinQ!™ Generation 5 silicon carbide diode (IDH16G65C5) represents Infineon’s leading edge technology
for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with
G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family
of products showing improved efficiency over all load conditions, coming from both the improved thermal