Specifications

EVALPFC-3kW-IPZ65R019C7
6
Application Note AN 2014-06
V1.1 January 2015
characteristics and a lower figure of merit (Q
c
*V
f
). More than this it offers also increased dv/dt robustness up
to 100V/ns which enables very fast switching. This is perfect fit to the fast switching CoolMOS
TM
C7 family.
1.4 CCM-PFC Controller
The evaluation board presented here is a 3kW power factor correction (PFC) circuit with 85~265VAC
universal input and output of 400VDC. The continuous conduction mode (CCM) PFC controller
ICE3PCS01G is employed in this board to achieve the unity power factor.
This ICE3PCS01G is specially designed for applications of power supplies used in PC, server, and Telecom,
requesting high efficiency and power factor. The voltage loop compensation is integrated digitally for better
dynamic response and less design effort. Appreciated for its high integrated design, ICE3PCS01G can
achieve full requirements of the PFC application implemented in the 14-pin in DSO14 package. At the same
time the number of peripheral components is minimized. The gate switching frequency is adjustable from
21kHz to 250kHz and able to synchronize with external switching frequency from 50kHz to 150kHz.
1.5 Gate Driver ICs (EiceDRIVER™ Compact)
Infineon EiceDRIVER™ family (IEDI60N12AF) offers a wide range of CT based gate drivers that supporting
for all topologies using CoolMOS in 3- and 4pin packages. CT utilizes on-chip coupled inductors realized
in the existing metal layers to transmit the gate drive signals from the input to the output stage with isolation
of more than 1200V provided by a thick inter-metal oxide. This approach offers high speed and very good
common-mode transient immunity, which is crucial to driver the MOSFET with fast voltage transients.
With the use of IEDI60N12AF on this evaluation board, the benefits of Infineon’s TO-247 4pin package can
fully demonstrate very fast switching behavior parallel to clean gate waveforms. Base on the CT technique,
the Kevin source can be completely isolated from the power source. Higher efficiency and better system
stability can be achieved.
The 6A driving capability of the driver output helps and is necessary to switch the 19mOhm CoolMOS
TM
very
fast. Even if the board will be used with higher ohmic devices, there it is of advantage to have a very strong
driving capability in order to minimize gate oscillation at fast switching.
The output of the driver is featured with separate Out+ and Out- for ease tune the turn on and turn off
behavior of the MOSFET by using different gate resistors connected to the different outputs without any
diode for separating turn on and turn off phase.
In the present evaluation board the two output pins are put together. This is due to the fact that the parallel
design for 3- and 4-Pin devices caused already 2 different changeable gate resistors. In order to keep the
complexity on low level, the design did not take the opportunity to separate turn on and turn off gate resistors
as this is not that much important for efficiency analyses.
Furthermore this driver is the only known driver up to now, which has a CMTI (common mode transient
immunity) of dv/dt =>100V/ns which is needed for high transition noise feedback from the drain to the gate
signal at fast switching mode.