Datasheet

AD780
REV. B
–3–
ORDERING GUIDE
Initial Temperature Temperature Package
Model Error Range Coefficient Options
AD780AN ⫾5.0 mV –40°C to +85°C 7 ppm/°C Plastic Dip
AD780AR ⫾5.0 mV –40°C to +85°C 7 ppm/°C SOIC
AD780AR-REEL7 ⫾5.0 mV –40°C to +85°C 7 ppm/°C SOIC
AD780BN ⫾1.0 mV –40°C to +85°C 3 ppm/°C Plastic Dip
AD780BR ⫾1.0 mV –40°C to +85°C 3 ppm/°C SOIC
AD780BR-REEL ⫾1.0 mV –40°C to +85°C 3 ppm/°C SOIC
AD780BR-REEL7 ⫾1.0 mV –40°C to +85°C 3 ppm/°C SOIC
AD780CR ⫾1.5 mV –40°C to +85°C 7 ppm/°C SOIC
AD780CR-REEL7 ⫾1.5 mV –40°C to +85°C 7 ppm/°C SOIC
ABSOLUTE MAXIMUM RATINGS*
V
IN
to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
Trim Pin to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
Temp Pin to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
Power Dissipation (25°C) . . . . . . . . . . . . . . . . . . . . . . 500 mW
Storage Temperature . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . 300°C
Output Protection: Output safe for indefinite short to ground
and momentary short to V
IN
.
ESD Classification . . . . . . . . . . . . . . . . . . . . . Class 1 (1000 V)
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any conditions above those indicated in the operational specifi-
cation is not implied. Exposure to absolute maximum specifications for extended
periods may affect device reliability.
PIN CONFIGURATION
8-Lead Plastic DIP, SOIC and Cerdip Packages
1
2
3
4
8
7
6
5
TOP VIEW
(Not to Scale)
AD780
2.5/3.0V SELECT
(NC OR GND)
NC
V
OUT
TRIM
NC
+V
IN
TEMP
GND
NC = NO CONNECT
DIE LAYOUT
NOTES
Both V
OUT
pads should be connected to the output
Die Thickness: The standard thickness of Analog Devices Bipolar dice is
24 mils ±2 mils.
Die Dimensions: The dimensions given have a tolerance of ± 2 mils.
Backing: The standard backside surface is silicon (not plated). Analog Devices
does not recommend gold-backed dice for most applications.
Edges: A diamond saw is used to separate wafers into dice thus providing per-
pendicular edges half-way through the die.
In contrast to scribed dice, this technique provides a more uniform die shape
and size. The perpendicular edges facilitate handling (such as tweezer pick-up)
while the uniform shape and size simplifies substrate design and die attach.
Top Surface: The standard top surface of the die is covered by a layer of
glassivation. All areas are covered except bonding pads and scribe lines.
Surface Metalization: The metalization to Analog Devices bipolar dice is alu-
minum. Minimum thickness is 10,000Å.
Bonding Pads: All bonding pads have a minimum size of 4.0 mils by 6.0 mils.
The passivation windows have a 3.6 mils by 5.6 mils minimum size.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD780 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE