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REV. B

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AD8012

Dual 350 MHz

Low Power Amplifier

*Protected under U.S. Patent Number 5,537,079.

FEATURES

Low Power

1.7 mA/Amplifier Supply Current

Fully Specified for 5 V and +5 V Supplies

High Output Current, 125 mA

High Speed

350 MHz, –3 dB Bandwidth (G = +1)

150 MHz, –3 dB Bandwidth (G = +2)

2,250 V/s Slew Rate

20 ns Settling Time to 0.1%

Low Distortion

–72 dBc Worst Harmonic @ 500 kHz, R

= 100 

–66 dBc Worst Harmonic @ 5 MHz, R

= 1 k

Good Video Specifications (R

= 1 k, G = +2)

0.02% Differential Gain Error

0.06 Differential Phase Error

Gain Flatness 0.1 dB to 40 MHz

60 ns Overdrive Recovery

Low Offset Voltage, 1.5 mV

Low Voltage Noise, 2.5 nV/√Hz

Available in 8-Lead SOIC and 8-Lead MSOP

APPLICATIONS

XDSL, HDSL Line Drivers

ADC Buffers

Professional Cameras

CCD Imaging Systems

Ultrasound Equipment

Digital Cameras

FUNCTIONAL BLOCK DIAGRAM

OUT1

–IN1

+IN1

OUT2

–IN2

+IN2–V

AD8012

PRODUCT DESCRIPTION

The AD8012 is a dual, low power, current feedback amplifier

capable of providing 350 MHz bandwidth while using only

1.7 mA per amplifier. It is intended for use in high frequency,

wide dynamic range systems where low distortion and high

speed are essential and low power is critical.

With only 1.7 mA of supply current, the AD8012 also offers

exceptional ac specifications such as 20 ns settling time and

2,250 V/µs slew rate. The video specifications are 0.02% differ-

ential gain and 0.06 degree differential phase, excellent for such

a low power amplifier. In addition, the AD8012 has a low offset

of 1.5 mV.

The AD8012 is well suited for any application that requires high

performance with minimal power.

The product is available in standard 8-lead SOIC or MSOP

packages and operates over the industrial temperature range

–40°C to +85°C.

– 

–40

–90

10 1k100

DISTORTION – dBc

–70

–80

–60

–50

G = +2

OUT

= 2V p-p

= 750

THIRD

SECOND

Figure 1. Distortion vs. Load Resistance, V

5V,

Frequency = 500 kHz

AMP 1

REF

= 100

135

OUT

Np:Ns

TRANSFORMER

LINE

POWER

IN dB

–

–V

–

Figure 2. Differential Drive Circuit for XDSL Applications

Summary of content (17 pages)

PAGE 1
Dual 350 MHz Low Power Amplifier AD8012* FEATURES Low Power 1.7 mA/Amplifier Supply Current Fully Specified for 5 V and +5 V Supplies High Output Current, 125 mA High Speed 350 MHz, –3 dB Bandwidth (G = +1) 150 MHz, –3 dB Bandwidth (G = +2) 2,250 V/ s Slew Rate 20 ns Settling Time to 0.1% Low Distortion –72 dBc Worst Harmonic @ 500 kHz, RL = 100 –66 dBc Worst Harmonic @ 5 MHz, RL = 1 k Good Video Specifications (RL = 1 k , G = +2) 0.02% Differential Gain Error 0.
PAGE 2
Powered by TCPDF (www.tcpdf.org) IMPORTANT LINKS for the AD8012* Last content update 08/18/2013 06:36 pm PARAMETRIC SELECTION TABLES DESIGN COLLABORATION COMMUNITY Find Similar Products By Operating Parameters Collaborate Online with the ADI support team and other designers about select ADI products.
PAGE 3
AD8012–SPECIFICATIONS DUAL SUPPLY (@ T = 25 C, V = 5 V, G = +2, R = 100 , R = R A S Parameter DYNAMIC PERFORMANCE –3 dB Small Signal Bandwidth 0.1 dB Bandwidth Large Signal Bandwidth Slew Rate Rise and Fall Time Settling Time Overdrive Recovery NOISE/HARMONIC PERFORMANCE Distortion Second Harmonic Third Harmonic Output IP3 IMD Crosstalk Input Voltage Noise Input Current Noise Differential Gain Differential Phase L F G = 750 , unless otherwise noted.) Conditions Min Typ G = +1, VOUT < 0.
PAGE 4
AD8012 SINGLE SUPPLY (@ T = 25 C, V = +5 V, G = +2, R = 100 , R = R A S Parameter DYNAMIC PERFORMANCE –3 dB Small Signal Bandwidth 0.1 dB Bandwidth Large Signal Bandwidth Slew Rate Rise and Fall Time Settling Time Overdrive Recovery NOISE/HARMONIC PERFORMANCE Distortion Second Harmonic Third Harmonic Output IP3 IMD Crosstalk Input Voltage Noise Input Current Noise Differential Gain Differential Phase L F G = 750 , unless otherwise noted.) Conditions Min Typ G = +1, VOUT < 0.
PAGE 5
AD8012 2.0 MAXIMUM POWER DISSIPATION MAXIMUM POWER DISSIPATION – W The maximum power that can be safely dissipated by the AD8012 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package.
PAGE 6
AD8012 ABSOLUTE MAXIMUM RATINGS 1 NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Specification is for device in free air at +25°C.
PAGE 7
AD8012–Typical Performance Characteristics 20mV 1V 5ns TPC 1. 100 mV Step Response; G = +2, VS = ±2.5 V or ±5 V, RL = 1 kΩ* 1V TPC 4. 4 V Step Response; G = –1, VS = ± 5 V, RL = 1 kΩ 20mV 10ns TPC 2. 4 V Step Response; G = +2, VS = ± 5 V, RL = 1 kΩ 20mV 10ns 5ns TPC 5. 100 mV Step Response; G = +2, VS = ±2.5 V or ±5 V, RL = 100 Ω* 500mV 5ns TPC 3. 100 mV Step Response; G = –1, VS = ± 2.5 V or ±5 V, RL = 1 kΩ* 10ns TPC 6. 2 V Step Response; G = +2, VS = ± 2.5 V, RL = 100 Ω *VS = ± 2.
PAGE 8
AD8012 1V 1V 10ns TPC 7. 4 V Step Response; G = +2, VS = ± 5 V, RL = 100 Ω 10ns TPC 10. 4 V Step Response; G = –1, VS = ± 5 V, RL = 100 Ω –40 G = +2 VOUT = 2V p-p RF = 750 DISTORTION – dBc –50 –60 THIRD –70 –80 SECOND 20mV 5ns –90 TPC 8. 100 mV Step Response; G = –1, VS = ±2.5 V or ±5 V, RL = 100 Ω* 10 100 RL – 1k TPC 11. Distortion vs.
PAGE 9
AD8012 0.5 0.5 G = +2 VO = 0.3V p-p RF = 750 RL = 100 VS = 5V NORMALIZED GAIN dB 0.3 0.2 G = +2 VO = 0.3V p-p RF = 750 RL = 100 VS = +5V 0.4 0.3 NORMALIZED GAIN dB 0.4 0.1 0 –0.1 –0.2 0.2 0.1 0 –0.1 –0.2 –0.3 –0.3 –0.4 –0.4 –0.5 –0.5 0.1 1 10 FREQUENCY MHz 100 0.1 TPC 13. Gain Flatness; VS = ± 5 V 100 TPC 16. Gain Flatness; VS = +5 V –40 5 G = +2 VOUT = 2V p-p RF = 750 VO = 0.
PAGE 10
AD8012 0 0 VIN = 0.2V p-p VS = 5V, +5V –10 –20 –20 –30 –30 –40 –40 –50 –60 –PSRR –50 –60 –70 –70 –80 –80 –90 –90 –100 0.03 0.1 –100 10 1 FREQUENCY – MHz 100 500 100k TPC 19. CMRR vs. Frequency; VS = ± 5 V, +5 V 1M 10M FREQUENCY – Hz 100M 500M TPC 22. PSRR vs. Frequency; VS = ± 5 V, +5 V 5 1k VO = 0.
PAGE 11
AD8012 9 7 SWING – V p-p G = +2 RF = 750 RL = 100 2V STEP OUTPUT VOLTAGE ERROR – 0.1%/DIV 5V 8 6 5 +5V 4 3 2 1 0.1% 0 10 100 LOAD – 1k 10k t=0 TPC 28. Settling Time, VS = ± 5 V 30 5 3.8 28 4 3.6 26 3.4 24 22 3.0 20 2.8 18 CURRENT NOISE +IN/–IN 16 14 2.4 2.2 VOLTAGE NOISE 2.0 100 1k 10k FREQUENCY – Hz 2 1 0 G = +1 –1 G = +10 –2 G = +2 –3 12 –4 10 100k –5 1 10 FREQUENCY – MHz 100 500 TPC 29. Frequency Response; VS = ± 5 V TPC 26. Noise vs. Frequency 9 0.
PAGE 12
AD8012 0.5 –20 DRIVER VO = 2V p-p RL = 100 –40 0.3 –50 –60 SIDE 1 –70 –80 SIDE 2 –90 0.2 0.1 0 –0.1 –0.2 –100 –0.3 –110 –0.4 –120 0.03 VO = 0.3V p-p RF = 750 RL = 1k 0.4 NORMALIZED GAIN – dB INPUT REFERRED ERROR – dB –30 –0.5 0.1 10 1 FREQUENCY – MHz 100 0.1 500 1 10 FREQUENCY – MHz 100 TPC 33. Gain Flatness; VS = +5 V TPC 31. Crosstalk vs. Frequency 5 VO = 0.
PAGE 13
AD8012 THEORY OF OPERATION The AD8012 is a dual, high speed CF amplifier that attains new levels of bandwidth (BW), power, distortion, and signal swing capability. Its wide dynamic performance (including noise) is the result of both a new complementary high speed bipolar process and a new and unique architectural design. The AD8012 uses a two-gain stage complementary design approach versus the traditional single-stage complementary mirror structure sometimes referred to as the Nelson amplifier.
PAGE 14
AD8012 APPLICATIONS Line Driving for HDSL TO RECEIVER CIRCUITRY High bitrate digital subscriber line (HDSL) is becoming popular as a means of providing full duplex data communication at rates up to 1.544 MBPS or 2.048 MBPS over moderate distances via conventional telephone twisted pair wires. Traditional T1 (E1 in Europe) requires repeaters every 3,000 feet to 6,000 feet to boost the signal strength and allow transmission over distances of up to 12,000 feet.
PAGE 15
AD8012 Choosing the Appropriate Turns Ratio for the Transformer Increasing the peak-to-peak output signal of the amplifier in the previous example and adding a variation in the turns ratio of the transformer can yield further enhancements to the circuit. The output signal swing of the AD8012 can be increased to about ± 3.9 V before clipping occurs. This increases the peak-to-peak output of the differential amplifier to 15.6 V.
PAGE 16
AD8012 Figure 8. Universal SOIC Noninverter Top Silkscreen Figure 11. Universal MSOP Noninverter Top Silkscreen Figure 9. Universal SOIC Noninverter Top Figure 12. Universal MSOP Noninverter Top Figure 10. Universal SOIC Noninverter Bottom Figure 13. Universal MSOP Noninverter Bottom REV.
PAGE 17
AD8012 OUTLINE DIMENSIONS 8-Lead Standard Small Outline Package [SOIC] Narrow Body (R-8) C01049–0–12/03(B) Dimensions shown in millimeters and (inches) 5.00 (0.1968) 4.80 (0.1890) 4.00 (0.1574) 3.80 (0.1497) 8 5 1 4 6.20 (0.2440) 5.80 (0.2284) 1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0040) 0.51 (0.0201) 0.31 (0.0122) COPLANARITY SEATING 0.10 PLANE 0.50 (0.0196) 45 0.25 (0.0099) 1.75 (0.0688) 1.35 (0.0532) 8 0.25 (0.0098) 0 1.27 (0.0500) 0.40 (0.0157) 0.17 (0.