Datasheet

AD9985
Rev. 0 | Page 6 of 32
AD9985BSTZ-110
Parameter Temp
Test
Level
Min Typ Max Unit
POWER SUPPLY
V
D
Supply Voltage Full IV 3.15 3.3 3.45 V
V
DD
Supply Voltage Full IV 2.2 3.3 3.45 V
P
VD
Supply Voltage Full IV 3.15 3.3 3.45 V
I
D
Supply Current (V
D
) 25°C V 132 mA
I
DD
Supply Current (V
DD
)
2
25°C V 19 mA
IP
VD
Supply Current (P
VD
) 25°C V 8 mA
Total Power Dissipation Full VI 525 760 mW
Power-Down Supply Current Full VI 5 15 mA
Power-Down Dissipation Full VI 16.5 50 mW
DYNAMIC PERFORMANCE
Analog Bandwidth, Full Power 25°C V 300 MHz
Transient Response 25°C V 2 ns
Overvoltage Recovery Time 25°C V 1.5 ns
Signal-to-Noise Ratio (SNR) 25°C V 44 dB
(Without Harmonics) Full V 43 dB
f
IN
= 40.7 MHz
Crosstalk Full V 55 dBc
THERMAL CHARACTERISTICS
θ
JC
Junction-to-Case
Thermal Resistance V 16 °C/W
θ
JA
Junction-to-Ambient
Thermal Resistance V 35 °C/W
1
VCO range = 10, charge pump current = 110, PLL divider = 1693.
2
DATACK load = 15 pF, data load = 5 pF.
.
EXPLANATION OF TEST LEVELS
Test L e vel
I. 100% production tested.
II. 100% production tested at 25°C and sample tested at specified temperatures.
III. Sample tested only.
IV. Parameter is guaranteed by design and characterization testing.
V. Parameter is a typical value only.
VI. 100% production tested at 25°C; guaranteed by design and characterization testing.