Datasheet

Data Sheet ADG824
Rev. C | Page 5 of 16
V
DD
= 1.65 V to 1.95 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V
DD
V
On Resistance, R
ON
1.3 Ω typ V
DD
= 1.8 V, V
S
= 0 V to V
DD
, I
DS
= 100 mA; see Figure 19
2
2.4
Ω max
3.1 3.6 Ω max V
DD
= 1.65 V, V
S
= 0 V to V
DD
, I
DS
= 100 mA; see Figure 19
On Resistance Match Between 0.01 Ω typ V
DD
= 1.65 V, V
S
= 0.7 V, I
DS
= 100 mA
Channels, ∆R
ON
LEAKAGE CURRENTS V
DD
= 1.95 V
Source Off Leakage, I
S
(Off) ±0.2 nA typ V
S
= 0.6 V/1.65 V, V
D
= 1.65 V/0.6 V; see Figure 20
Channel On Leakage, I
D
, I
S
(On) ±0.2 nA typ V
S
= V
D
= 0.6 V or 1.65 V; see Figure 21
DIGITAL INPUTS
Input High Voltage, V
INH
0.65 V
DD
V min
Input Low Voltage, V
INL
0.35 V
DD
V max
Input Current
I
INL
or I
INH
0.005
µA typ
V
IN
= V
GND
or V
DD
±0.1 µA max V
IN
= V
GND
or V
DD
Digital Input Capacitance, C
IN
2.7 pF typ
DYNAMIC CHARACTERISTICS
1
t
ON
13 ns typ R
L
= 50 Ω, C
L
= 35 pF
18.6 19.3 ns max V
S
= 1.2 V/0 V; see Figure 22
t
OFF
7 ns typ R
L
= 50 Ω, C
L
= 35 pF
9.8 10.2 ns max V
S
= 1.2 V; see Figure 22
Break-Before-Make Time Delay, t
BBM
7.5 ns typ R
L
= 50 Ω, C
L
= 35 pF
5 ns min V
S1
= V
S2
= 1.2 V; see Figure 23
Charge Injection, Q
INJ
15 pC typ V
S
= 1 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 24
Off Isolation −71 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 25
Channel-to-Channel Crosstalk −90 dB typ
S1A to S2A/S1B to S2B, R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz;
see Figure 26
−71
dB typ
S1A to S1B/S2A to S2B, R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz;
see Figure 27
Total Harmonic Distortion, THD + N 0.4 % R
L
= 33 Ω, f = 20 Hz to 20 kHz, V
S
= 1.2 V p-p
Insertion Loss −0.1 dB typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 28
–3 dB Bandwidth 90 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 28
C
S
(Off) 26 pF typ
C
D
, C
S
(On) 61 pF typ
POWER REQUIREMENTS V
DD
= 1.95 V
I
DD
0.003 µA typ Digital inputs = 0 V or 1.95 V
1 µA max
1
Guaranteed by design; not subject to production test.