Datasheet

ADM1275 Data Sheet
Rev. D | Page 4 of 48
SPECIFICATIONS
V
CC
= 2.95 V to 20 V, V
CC
≥ V
SENSE+
, V
SENSE+
= 2 V to 20 V, V
SENSE
= (V
SENSE+
− V
SENSE−
) = 0 V, T
A
= −40°C to +85°C, unless otherwise noted.
Table 1.
Parameter Min Typ Max Unit Test Conditions/Comments
POWER SUPPLY
Operating Voltage Range, V
CC
2.95 20 V
Undervoltage Lockout 2.4 2.7 V V
CC
rising
Undervoltage Hysteresis 90 120 mV
Quiescent Current, I
CC
5 mA GATE on and power monitor running
UV PIN
Input Current, I
UV
100 nA UV ≤ 3.6 V
UV Threshold, UV
TH
0.97 1.0 1.03 V UV falling
UV Threshold Hysteresis, UV
HYST
40 50 60 mV
UV Glitch Filter, UV
GF
2
7
μs
50 mV overdrive
UV Propagation Delay, UV
PD
5 8 μs UV low to GATE pull-down active
OV PIN ADM1275-1 and ADM1275-3
Input Current, I
OV
100
nA
OV ≤ 3.6 V
OV Threshold, OV
TH
0.97 1.0 1.03 V OV rising
OV Threshold Hysteresis, OV
HYST
50 60 70 mV
OV Glitch Filter, OV
GF
0.5 1.5 μs 50 mV overdrive
OV Propagation Delay, OV
PD
1.0 2 μs OV high to GATE pull-down active
SENSE+ AND SENSE− PINS
Input Current, I
SENSEx
150 μA Per individual pin; SENSE+, SENSE− = 20 V
Input Imbalance, I
ΔSENSE
5 μA I
ΔSENSE
= (I
SENSE+
) − (I
SENSE−
)
VCAP PIN
Internally Regulated Voltage, V
VCAP
2.66 2.7 2.74 V 0 µA ≤ I
VCAP
≤ 100 µA; C
VCAP
= 1 μF
ISET PIN
Reference Select Threshold, V
ISETRSTH
1.35 1.5 1.65 V If V
ISET
> V
ISETRSTH
, an internal 1 V reference (V
CLREF
) is used
Internal Reference, V
CLREF
1 V Accuracies included in total sense voltage accuracies
Gain of Current Sense Amplifier, AV
CSAMP
50 V/V Accuracies included in total sense voltage accuracies
Input Current, I
ISET
100
nA
V
ISET
≤ V
VCAP
GATE PIN Maximum voltage on the gate is always clamped to ≤31 V
Gate Drive Voltage, ΔV
GATE
ΔV
GATE
= V
GATE
− V
SENSE+
10 12 14 V 15 V ≥ V
CC
≥ 8 V; I
GATE
≤ 5 μA
4.5 13 V 20 V ≥ V
CC
≥ 15 V; I
GATE
≤ 5 μA
8 10 V V
SENSE+
= V
CC
= 5 V; I
GATE
≤ 5 μA
4.5 6 V V
SENSE+
= V
CC
= 2.95 V; I
GATE
≤ 1 μA
Gate Pull-Up Current, I
GATEUP
−20 −30 μA V
GATE
= 0 V
Gate Pull-Down Current, I
GATEDN_REG
45
60
75
μA
V
GATE
≥ 2 V; V
ISET
= 1.0 V; (SENSE+) − (SENSE−) = 30 mV
Gate Pull-Down Current, I
GATEDN_SLOW
5 10 15 mA V
GATE
≥ 2 V
Gate Pull-Down Current, I
GATEDN_FAST
750 1500 2000 mA V
GATE
≥ 12 V; V
CC
≥ 12 V
Gate Holdoff Resistance 20 Ω V
CC
= 0 V
HOT-SWAP SENSE VOLTAGE
Hot-Swap Sense Voltage Current Limit,
V
SENSECL
19.6 20 20.4 mV
V
ISET
> 1.65 V; V
FLB
> 1.12 V; V
GATE
= (SENSE+) + 3 V;
I
GATE
= 0 μA; V
SS
≥ 2 V
Foldback Inactive V
GATE
= (SENSE+) + 3 V; I
GATE
= 0 μA; V
SS
≥ 2 V
24.6 25 25.4 mV V
ISET
= 1.25 V; V
FLB
> 1.395 V
19.6 20 20.4 mV V
ISET
= 1.0 V; V
FLB
> 1.12 V
9.6 10 10.4 mV V
ISET
= 0.5 V; V
FLB
> 0.57 V
4.6 5 5.4 mV V
ISET
= 0.25 V; V
FLB
> 0.295 V
Foldback Active 3.5 4 4.5 mV V
FLB
= 0 V; V
GATE
= (SENSE+) + 3 V; I
GATE
= 0 μA; V
SS
≥ 1 V
9.6 10 10.4 mV
V
ISET
> 1.0 V; V
FLB
= 0.5 V; V
GATE
= (SENSE+) + 3 V; I
GATE
= 0 μA;
V
SS
≥ 1 V